T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar • Civilian radar • Professional...
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power
Transistor
Applications
Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers
Product Features
Frequency: DC to 6 GHz Output Power (P3dB): 25 W at 5.6 GHz Linear Gain: >14 dB at 5.6 GHz Operating Voltage: 28 V Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1 2 Flange
Label
VD / RF OUT VG / RF IN Source
Ordering Information
Part
ECCN
T2G6003028-FL EAR99
T2G6003028-FLEVB1
EAR99
T2G6003028-FLEVB2
EAR99
Description
Packaged part Flanged
5.4 – 5.9 GHz Evaluation Board
1.3 – 1.9 GHz Evaluation Board
Datasheet: Rev A 12-03-13 © 2013 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power
Transistor
Absolute Maximum Ratings
Parameter
Breakdown Voltage (BVDG) Gate Voltage Range (VG) Drain Current (ID) Ga...