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TGA2583-SM

TriQuint Semiconductor

10W GaN Power Amplifier

Applications • Commercial and Military Radar TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier QFN 5x5 mm 32L Product...


TriQuint Semiconductor

TGA2583-SM

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Description
Applications Commercial and Military Radar TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier QFN 5x5 mm 32L Product Features Frequency Range: 2.7 - 3.7 GHz PSAT: 40.5 dBm PAE: > 50 % Small Signal Gain: 33 dB Return Loss: > 12 dB Bias: VD = 25 - 32 V (CW or Pulsed), IDQ = 175 mA, VG = −2.3 V Typical Pulsed VD: PW = 100 us, DC = 10 % Package Dimensions: 5.0 x 5.0 x 1.45 mm Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 RF OUT 3 4 5 6 7 8 24 23 22 RF IN 21 20 19 18 17 9 10 11 12 13 14 15 16 General Description TriQuint’s TGA2583-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.7 GHz. The TGA2583-SM is designed using TriQuint’s production 0.25-μm GaN on SiC process. The TGA2583-SM typically provides 40.5 dBm of saturated output power, > 50% power-added efficiency, and 33 dB small signal gain. It can operate under both pulse and CW conditions. The TGA2583-SM is available in a low-cost, surface mount 32 lead 5x5 AIN QFN. It is ideally suited to support both commercial and defense related radar applications. Pin Configuration Pad No. 1, 3-4, 6, 8-9, 13, 16-17, 19, 21, 23-25, 32 3 5, 7, 10-11, 15, 18, 20, 26-31 12 14 22 Symbol GND RF OUT NC DRAIN GATE RF IN Both RF ports have integrated DC blocking capacitors and are fully matched to 50 ohms. Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part TGA2583-SM ECCN Description 3A001.b.2.a 2.7 - 3.7 GHz, 10 W GaN Power Amplifier Prel...




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