D1391

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1391 DESCRIPTION www.dat·aWshiethet4TuO.co-3mPN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO VCEO Collector-base voltage Collector-emitter voltage VEBO IC ICM PC Tj Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 700 6 5 17 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4.5A; IB=2A VBEsat Base-emitter saturation voltage IC=4.5A; IB=2A ICBO Collector cut-off current VCB=750V; IE=0 VCB=1500V; IE=0 hFE DC current gain IC=3A ; VCE=10V tf Fall time ts Storage time IC=4A IBend=1.5A,LB=10µH Product Specification 2SD1391 MIN TYP. MAX UNIT 700 V 6V 2.0 V 1.3 V 50 µA 1.0 mA 4 15 1.0 µs 11 µs 2 SavantIC Semiconductor Silicon NPN Power Trans...