TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC2880
2SC2880
High Voltage Switching Applications
...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (PCT process)
2SC2880
2SC2880
High Voltage Switching Applications
Unit: mm
High voltage: VCEO = 150 V High transition frequency: fT = 120 MHz Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1200
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
200 150
5 50 10 500
800
150 −55 to 150
V V V mA mA
mW
°C °C
PW-Mini JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2009-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector...