TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications Medium Power Amplifier Ap...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications Medium Power Amplifier Applications
2SC2982
Unit: mm
High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)
Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1314
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse (Note 1)
Base current
DC Pulse (Note 1)
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCES VCEO VEBO
IC ICP IB IBP PC PC (Note 2)
Tj Tstg
30 30 10 6 2 4 0.4 0.8 500
1000
150 −55 to 150
V V V A
A
mW
°C °C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: 2SC2982 mounted on a ceramic substrate (250 mm2 × 0.8 t)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2004-07-07
2SC2982
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 30 V, IE = 0
IEBO
VEB = 6 V, I...