2SC2668

2SC2668 TO-92S Transistor (NPN) 1. EMITTER 2. COLLECTOR 1 2 3 3. BASE Features — Small reverse transfer capacitance — Low Noise Figure TO-92S MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 30 4 20 200 150 -55-150 Units V V V mA mW ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Reverse Transfer Capacitance Collector-Base Time Constant Transition frequency Power Gain Noise figure Symbol Test conditions V(BR)CBO IC =100μA, IE=0 V(BR)CEO V(BR)EBO IC =1mA, IB=0 IE=100μA, IC=0 ICBO VCB=40V, IE=0 IEBO VEB=4V, IC=0 hFE VCE=6V, IC=1mA Cre VCE=6V, f=1MHz Cc·rbb’ VCE=6V, IE=-1mA, f=30MHz fT VCE=6V, IC=1mA Gpe VCC=6V, IC =1mA, f=100MHz NF VCC=6V, IC =1mA, f=100MHz MIN TYP MAX UNIT 40 V 30 V 4V 0.5 μA 0.5 μA 40 200 0.7 pF 30 ps 550 MHz 18 dB 5 dB CLASSIFICATION OF hFE Rank Range R 40-80 O 70-140 Y 100-200 Typical Characteristics 2SC2668 TO-92S Transistor (NPN) ...