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2SC2290
Silicon NPN POWER TRANSISTOR
Description
HG Semiconductors HG RF POWER
TRANSISTOR
2SC2290 ROHS Compliance,Silicon
NPN
POWER
TRANSISTOR
Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W PEP (Min.) Power Gain : Gp = 11.8dB (Min.) Collector Efficiency ηC: = 35% (Min.) Intermodulation Distortion : IMD = 30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltag...
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