MJL3281A

isc Silicon NPN Power Transistor DESCRIPTION ·Low Harmonic Distortion ·High Safe Operation Area — 1 A/100 V @ 1 sec ·High fT — 30 MHz （TYP） ·Complement to Type MJL1302A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VCEX Collector-Emitter Voltage-1.5V IC Collector Current-Continuous ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ VALUE UNIT 200 V 200 V 7 V 200 V 15 A 25 A 200 W TJ Junction Temperature Tstg Storage Temperature Range 150 ℃ -65~150 ℃ MJL3281A isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJL3281A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage V(BR)EBO Emitter-Base Voltage VCE(sat) Collector-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain hFE-4 DC Current Gain hFE-5 DC Current Gain hFE-6 DC Current Gain hFE-7 DC Current Gain CONDITIONS IC= 50mA; IB= 0 IE = 100 uA, IC = 0 IC= 10A; IB=1A VCB= 200V; IE= 0 VEB= 5V; IC= 0 IC = 100 mA, VCE = 5 V IC = 1 A, VCE = 5 V IC = 3 A, VCE = ...