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MT4S23U

Toshiba
Part Number MT4S23U
Manufacturer Toshiba
Description Silicon NPN Epitaxial Planar Type Transistor
Published Jun 11, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S23U VHF~UHF Band Low Noise Amplifier Applications • Low Noise F...
Datasheet PDF File MT4S23U PDF File

MT4S23U
MT4S23U

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S23U VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.
4dB (Typ.
) (@f = 2 GHz) • High Gain: |S21e|2 = 12dB (Typ.
) (@f = 2 GHz) • Compatible with 2SC5319 MT4S23U Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC(Note.
1) Tj Tstg Rating 8 5 1.
5 40 10 170 150 −55 to 150 Unit V V V mA mA mW °C °C USQ 1.
Emitter1(E1) 2.
Collector(C) 3.
Emitter2(E2) 4.
Base(B) JEDEC ― JEITA ― TOSHIBA 2-2K1A Weigh...


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