Ordering number : EN5512C
2SC5347
SANYO Semiconductors
DATA SHEET
2SC5347
NPN Epitaxial Planar Silicon Transistor
Hig...
Ordering number : EN5512C
2SC5347
SANYO Semiconductors
DATA SHEET
2SC5347
NPN Epitaxial Planar Silicon
Transistor
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications
Features
High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). :⏐S21e⏐2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Marking : CZ
Symbol
ICBO IEBO hFE
fT Cob Cre ⏐S21e⏐2 NF
Conditions Mounted on a ceramic board (900mm2✕0.8mm)
Ratings 20 12 2
150 1.3 150 --55 to +150
Conditions
VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=50mA VCE=5V, IC=50mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=50mA, f=1GHz VCE=5V, IC=50mA, f=1GHz
Ratings min typ
60* 3 4.7 1.3 0.9 68 1.8
max 1.0 10
270*
2.0
3.0
Unit V V V mA W °C °C
Unit
μA μA
GHz pF pF dB dB
* : The 2SC5347 is classified by 50mA hFE as follows :
Rank
D
E
hFE
60 to 120
90 to 180
F 135 to 270
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that ...