C5307

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications 2SC5307 Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Ta = 25°C (Note) Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 400 400 7 50 100 25 500 1000 150 −55 to 150 Note: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Unit V V V mA mA mW °C °C Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Symbol ICBO IEBO VCEO hFE (1) hFE (2) VCE (sat) VBE Cob Test Condition VCB = 400 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 20 mA IC = 20 mA, IB = 0.5 mA VCE = 5 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Min Typ. Max Unit ― ― 1 µA ― ― 1 µA 400 ― ― V 80 ― ― 100 ― 300 ― 0.4 1.0 V ― 0.7 0.85 V ― 4.0 ― pF Marking Part No. (or abbreviation code) AL Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-07 Coll...