Ordering number:EN5416A
NPN Triple Diffused Planar Silicon Transistor
2SC5300
Ultrahigh-Definition Color Display Horizo...
Ordering number:EN5416A
NPN Triple Diffused Planar Silicon
Transistor
2SC5300
Ultrahigh-Definition Color Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC5300]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current
DC Current Gain
Symbol
Conditions
ICES VCEO(sus)
IEBO ICBO hFE1 hFE2
VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 VCB=800V, IE=0 VCE=5V, IC=1.0A VCE=5V, IC=16A
2.8 2.0 1.0
123
5.45 5.45
3.5 20.4
2.0
0.6
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Ratings 1500 800 6 20 40 3 75 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ max
Unit
1.0 mA
800 V
1.0 mA
10 µA
20 30
47
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems,...
