TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5359
Power Amplifier Applications
2SC5359
Unit: mm
• High break...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SC5359
Power Amplifier Applications
2SC5359
Unit: mm
High breakdown voltage: VCEO = 230 V Complementary to 2SA1987 Suitable for use in 100-W high fidelity audio amplifier’s output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 230 V
Collector-emitter voltage
VCEO 230 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 15 A
Base current
IB 1.5 A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
PC 180 W
Tj 150 °C
T stg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-21F1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 9.75 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2012-08-31
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturat...
