K223

Ordering number:EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features · Ultrahigh withstand voltage (VGDS≥–80V). · Due to low gate leakage currents even at high voltage, the 2SK223 is suitable for a wide range of application (IGDL=1nA/VDS=50V, ID=1mA). · High yfs(yfs=20mS/VDS=30V, f=1kHz). Package Dimensions unit:mm 2019B [2SK223] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG PD Tj Tstg Electrical Characteristics at Ta = 25˚C 1.3 Conditions Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance V(BR)GDS IGSS IDSS* VGS(off) | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss Noise Figure NF * : The 2SK223 is classified by IDSS as follows (unit : mm) : IG=–100µA VGS=–30V, VDS=0 VDS=30V, VGS=0 VDS=30V, ID=10µA VDS=30V, VGS=0, f=1kHz VDS=30V, VGS=0, f=1MHz VDS=30V, VGS=0, f=1MHz VDS=10V, ID=3mA, Rg=10kΩ, f=1kHz 1.2 D 3.0 2.5 E 6.0 5.0 F 12.0 10.0 G 24.0 1.3 0.44 1 : Source 2 : Gate 3 : Drain SANYO : NP JEDEC : TO-92 EIAJ : SC-43 Ratings 80 –80 10 400 125 –40 to +125 Unit V V mA mW ˚C ˚C Ratings min typ –80 1.2* –0.75 20 12 2.5 1.5 max –1.0 24* Unit V nA mA V mS pF pF dB Any and a...