C4987

Ordering number:EN4723 NPN Epitaxial Planar Silicon Transistor 2SC4987 High-Speed Switching Applications Features · Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacitance. · Very small-sized package permitting 2SC4987- applied sets to be made small and slim. Package Dimensions unit:mm 2106A [2SC4987] 0.3 0.75 0.6 0 to 0.1 0.4 0.8 0.4 1.6 0.1max 0.5 0.5 1.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE fT Cob * : The 2SC4987 is classified by 10mA hFE as follows : VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=10mA VCE=10V, IC=10mA VCB=5V, f=1MHz Marking B4 hFE 50 to 100 B5 70 to 140 0.2 0.1 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Ratings 40 40 15 5 200 500 40 150 150 –55 to +150 Unit V V V V mA mA mA mW ˚C ˚C Ratings min typ 50* 90 450 750 1.4 max 0.1 0.1 200* 4.0 Unit µA µA MHz pF B6 100 to 200 Any and all SANYO products described or contained herein do not have specifications that can handle applica...