Document
Ordering number:ENN4135
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1855/2SC4837
50V/4A Switching Applications
Applications
· Power supplies, relay drivers, lamp drivers.
Features
· Adoption of FBET and MBIT processes. · Large allowable collector dissipation. · Low saturation voltage. · Wide ASO and large current capacity. · Usage of radial taping to meet automatic mounting.
Package Dimensions
unit:mm
2084B
[2SA1855/2SC4837]
4.5
10.5
1.9 1.2
2.6 1.4
1.0 8.5
( ) : 2SA1855
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
1.2
1.6 0.5
123
2.5 Conditions
2.5
7.5
0.5
1 : Emitter 2 : Collector 3 : Base SANYO : FLP
Ratings (–)60 (–)50 (–)6 (–)4 (–)6 1.5 150
–55 to +150
Unit V V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product Output Capacitance
ICBO IEBO hFE1 hFE2
fT Cob
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)10mA VCE=(–)2V, IC=(–)3A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz
* : The 2SA1855/2SC4837 are classified by 100mA hFE as follows :
Rank hFE
RST 100 to 200 140 to 280 200 to 400
Ratings min typ max
Unit
(–)1 µA
(–)1 µA
100* 40
400*
150 (39)25
MHz pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/5132MH (KOTO) No.4135–1/4
2SA1855/2SC4837
Continued from preceding page. Parameter
Symbol
Conditions
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
VCE(sat) IC=(–)2A, IB=(–)100mA
VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
ton
IC=(–)2A, IB=(–)100mA IC=–10µA, IE=0 IC=–1mA, RBE=∞ IE=–10µA, IC=0 See specified Test CIrcuit
tstg See specified Test CIrcuit
tf See specified Test Circuit
PW=20µs DC≤1%
INPUT
IB1 IB2
OUTPUT
RB RL
VR 50Ω +
25Ω +
100µF 470µF
VBE= --5V
VCC=25V
IC=10IB1= --10IB2=1A
Ratings min typ
(–350) 190
(–)0.94 (–)60 (–)50
(–)6 70
(450) 650
(30)35
max (–700)
500 (–)1.2
Unit
mV mV V V V V ns ns ns ns
Collector Current, IC – A
--5
2SA1855
--4
--3
IC -- VCE
--200mA --100mA --50mA
--2 --20mA --10mA
--1 --5mA
0 0
--2.0
--1.6
--1.2
--0.8
IB=0
--0.4
--0.8
--1.2
--1.6
--2.0
Collector-to-Emitter Voltage, VCE – V ITR04917
IC -- VCE
--12mA --10mA
2SA1855
--8mA
--6mA
--4mA
--2mA
--0.4
0 IB=0
0 --4 --8 --12 --16 --20
Collector-to-Emitter Voltage, VCE – V ITR04919
Collector Current, IC – A
Collector Current, IC – A
5
2SC4837
4
3
2
1
IC -- VCE
100mA 80mA 60mA 40mA
20mA
10mA
5mA
0 IB=0
0 0.4 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, VCE – V ITR04918
IC -- VCE
2.0
2SC4837 8mA 1.6 7mA
6mA
1.2 5mA
4mA
0.8 3mA
2mA
0.4
1mA
0 IB=0
0 4 8 12 16 20
Collector-to-Emitter Voltage, VCE – V ITR04920
Collector Current, IC – A
No.4135–2/4
2SA1855/2SC4837
IC -- VBE
IC -- VBE
--4.8 4.8
2SA1855
2SC4837
VCE= --2V
--4.0 4.0
VCE=2V
Ta2=5°75C°C --25°C Collector Current, IC – A
Collector Current, IC – A
--3.2 3.2
--2.4 2.4
T2a5=°7C5°C --25°C
--1.6 1.6
DC Current Gain, hFE
Gain-Bandwidth Product, fT – MHz
--0.8
0 0
1000 7 5 3 2
100 7 5 3 2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE – V ITR04921
hFE -- IC
2SA1855 VCE= --2V
Ta=75°C 25°C --25°C
10 7 --0.01
1000 7 5
2 3 5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC – A
fT -- IC
23 5 ITR04923
VCE=10V
3
2 2SC4837 2SA1855
100
7 5
3 2
10 (For PNP, minus sign is omitted.)
0.01 2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, IC – A
VCE(sat) -- IC
5
3
2
2 3 5 7 10 ITR04925
2SA1855 IC / IB=20
--1000 7 5
3 2
--100 7 5
3 2
25°C
Ta=
--25°C 75°C
--10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC – A
23 5 ITR04927
Collector-to-Emitter Saturation Voltage, VCE(sat) – mV
Output Capacitance, Cob – pF
DC .