DatasheetsPDF.com

A1855 Dataheets PDF



Part Number A1855
Manufacturers Sanyo
Logo Sanyo
Description 2SA1855
Datasheet A1855 DatasheetA1855 Datasheet (PDF)

Ordering number:ENN4135 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1855/2SC4837 50V/4A Switching Applications Applications · Power supplies, relay drivers, lamp drivers. Features · Adoption of FBET and MBIT processes. · Large allowable collector dissipation. · Low saturation voltage. · Wide ASO and large current capacity. · Usage of radial taping to meet automatic mounting. Package Dimensions unit:mm 2084B [2SA1855/2SC4837] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 ( ) : 2SA1855 Specifi.

  A1855   A1855


Document
Ordering number:ENN4135 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1855/2SC4837 50V/4A Switching Applications Applications · Power supplies, relay drivers, lamp drivers. Features · Adoption of FBET and MBIT processes. · Large allowable collector dissipation. · Low saturation voltage. · Wide ASO and large current capacity. · Usage of radial taping to meet automatic mounting. Package Dimensions unit:mm 2084B [2SA1855/2SC4837] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 ( ) : 2SA1855 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg 1.2 1.6 0.5 123 2.5 Conditions 2.5 7.5 0.5 1 : Emitter 2 : Collector 3 : Base SANYO : FLP Ratings (–)60 (–)50 (–)6 (–)4 (–)6 1.5 150 –55 to +150 Unit V V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)10mA VCE=(–)2V, IC=(–)3A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz * : The 2SA1855/2SC4837 are classified by 100mA hFE as follows : Rank hFE RST 100 to 200 140 to 280 200 to 400 Ratings min typ max Unit (–)1 µA (–)1 µA 100* 40 400* 150 (39)25 MHz pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91003TN (KT)/91098HA (KT)/5132MH (KOTO) No.4135–1/4 2SA1855/2SC4837 Continued from preceding page. Parameter Symbol Conditions Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Switching Time Test Circuit VCE(sat) IC=(–)2A, IB=(–)100mA VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton IC=(–)2A, IB=(–)100mA IC=–10µA, IE=0 IC=–1mA, RBE=∞ IE=–10µA, IC=0 See specified Test CIrcuit tstg See specified Test CIrcuit tf See specified Test Circuit PW=20µs DC≤1% INPUT IB1 IB2 OUTPUT RB RL VR 50Ω + 25Ω + 100µF 470µF VBE= --5V VCC=25V IC=10IB1= --10IB2=1A Ratings min typ (–350) 190 (–)0.94 (–)60 (–)50 (–)6 70 (450) 650 (30)35 max (–700) 500 (–)1.2 Unit mV mV V V V V ns ns ns ns Collector Current, IC – A --5 2SA1855 --4 --3 IC -- VCE --200mA --100mA --50mA --2 --20mA --10mA --1 --5mA 0 0 --2.0 --1.6 --1.2 --0.8 IB=0 --0.4 --0.8 --1.2 --1.6 --2.0 Collector-to-Emitter Voltage, VCE – V ITR04917 IC -- VCE --12mA --10mA 2SA1855 --8mA --6mA --4mA --2mA --0.4 0 IB=0 0 --4 --8 --12 --16 --20 Collector-to-Emitter Voltage, VCE – V ITR04919 Collector Current, IC – A Collector Current, IC – A 5 2SC4837 4 3 2 1 IC -- VCE 100mA 80mA 60mA 40mA 20mA 10mA 5mA 0 IB=0 0 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, VCE – V ITR04918 IC -- VCE 2.0 2SC4837 8mA 1.6 7mA 6mA 1.2 5mA 4mA 0.8 3mA 2mA 0.4 1mA 0 IB=0 0 4 8 12 16 20 Collector-to-Emitter Voltage, VCE – V ITR04920 Collector Current, IC – A No.4135–2/4 2SA1855/2SC4837 IC -- VBE IC -- VBE --4.8 4.8 2SA1855 2SC4837 VCE= --2V --4.0 4.0 VCE=2V Ta2=5°75C°C --25°C Collector Current, IC – A Collector Current, IC – A --3.2 3.2 --2.4 2.4 T2a5=°7C5°C --25°C --1.6 1.6 DC Current Gain, hFE Gain-Bandwidth Product, fT – MHz --0.8 0 0 1000 7 5 3 2 100 7 5 3 2 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Base-to-Emitter Voltage, VBE – V ITR04921 hFE -- IC 2SA1855 VCE= --2V Ta=75°C 25°C --25°C 10 7 --0.01 1000 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A fT -- IC 23 5 ITR04923 VCE=10V 3 2 2SC4837 2SA1855 100 7 5 3 2 10 (For PNP, minus sign is omitted.) 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC – A VCE(sat) -- IC 5 3 2 2 3 5 7 10 ITR04925 2SA1855 IC / IB=20 --1000 7 5 3 2 --100 7 5 3 2 25°C Ta= --25°C 75°C --10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 23 5 ITR04927 Collector-to-Emitter Saturation Voltage, VCE(sat) – mV Output Capacitance, Cob – pF DC .


C4837 A1855 C4839


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)