Ordering number:EN4409
2SA1830 : PNPEpitaxial Planar Silicon Transistor 2SC4734 ; NPN Triple Diffused Planar Silicon Tr...
Ordering number:EN4409
2SA1830 :
PNPEpitaxial Planar Silicon
Transistor 2SC4734 ;
NPN Triple Diffused Planar Silicon
Transistor
2SA1830/2SC4734
High-Voltage Driver Applications
Features
· Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). · Possible to offer the 2SA1830/2SC4734 devices in a
tape reel packaging, which facilitates automatic
insertion.
Package Dimensions
unit:mm 2084A
[2SA1830/2SC4734]
( ) : 2SA1830
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)300V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)10V, IC=(–)100mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)100mA
Output Capacitance Collector-to-Emitter Saturation Voltage
Cob VCB=(–)30V, f=1MHz VCE(sat) IC=(–)500mA, IB=(–)50mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)500mA, IB=(–)50mA
* : The 2SA1830/2SC4734 are classified by 100mA hFE as follows :
40 C 80 60 D 120 100 E 200
1 : Emitter 2 : Collector 3 : Base
SANYO : FLP
Ratings (–)400 (–)400 (–)5 (–)2 (–)4 1.5 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
40* (40)60 (25)15
max (–)1.0 (–)1.0 200*
(–)1.0 (–)1.0
Unit...
