Ordering number:EN3486
NPN Epitaxial Planar Silicon Transistor
2SC4695
Low-Frequency General-Purpose Amplifier, Muting ...
Ordering number:EN3486
NPN Epitaxial Planar Silicon
Transistor
2SC4695
Low-Frequency General-Purpose Amplifier, Muting Applications
Features
· Adoption of FBET process.
· High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)]. · Very small-sized package permitting 2SC4695-
applied sets to be made small and slim.
Package Dimensions
unit:mm 2018B
[2SC4695]
0.4 3
0.16 0 to 0.1
0.5 1.5 0.5 2.5
1 0.95 0.95 2 1.9 2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Marking :WT
Symbol
Conditions
ICBO IEBO hFE
fT Cob
VCB=40V, IE=0 VEB=20V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA VCB=10V, f=1MHz
0.8 1.1
1 : Base 2 : Emitter 3 : Collector SANYO : CP
Ratings 50 20 25
500 800 100 250 150 –55 to +150
Unit V V V mA mA mA
mW ˚C ˚C
Ratings min typ
300 250 3.6
max 0.1 0.1
1200
Unit µA µA
MHz pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s...
