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A1785 Dataheets PDF



Part Number A1785
Manufacturers Sanyo
Logo Sanyo
Description 2SA1785
Datasheet A1785 DatasheetA1785 Datasheet (PDF)

Ordering number:ENN3511A Features · Large current capacity (IC=1A). · High breakdown voltage (VCEO≥400V). 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Package Dimensions unit:mm 2064A [2SA1785/2SC4645] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 1.0 0.9 1 0.6 0.5 23 0.45 ( ) : 2SA1785 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Coll.

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Ordering number:ENN3511A Features · Large current capacity (IC=1A). · High breakdown voltage (VCEO≥400V). 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Package Dimensions unit:mm 2064A [2SA1785/2SC4645] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 1.0 0.9 1 0.6 0.5 23 0.45 ( ) : 2SA1785 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 2.54 Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)300V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)10V, IC=(–)100mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)50mA Output Capacitance Cob VCB=(–)30V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)200mA, IB=(–)20mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)200mA, IB=(–)20mA * : The 2SA1785/2SC4465 are classified by 100mA hFE as follows : Rank C D E hFE 40 to 80 60 to 120 100 to 200 1 : Emitter 2 : Collector 2.54 3 : Base SANYO : NMP Ratings (–)400 (–)400 (–)5 (–)1 (–)2 1 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ max Unit (–)1.0 µA (–)1.0 µA 40* 200* (50)70 MHz (12)8 pF (–)1.0 V (–)1.0 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 93003TN (KT)/83198HA (KT)/12894TH AX-8287/5170TA (KOTO) 8-6910 No.3511–1/5 Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time 2SA1785/2SC4645 Symbol Conditions V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 ton See specified Test Circuit tstg See specified Test Circuit tf See specified Test Circuit Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR 50Ω IB1 IB2 RB + 100µ.


C4645 A1785 C4646


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