Ordering number:ENN3511A
Features
· Large current capacity (IC=1A). · High breakdown voltage (VCEO≥400V).
2SA1785 : PNP...
Ordering number:ENN3511A
Features
· Large current capacity (IC=1A). · High breakdown voltage (VCEO≥400V).
2SA1785 :
PNP Epitaxial Planar Silicon
Transistor 2SC4645 :
NPN Triple Diffused Planar Silicon
Transistor
2SA1785/2SC4645
High Voltage Driver Applications
Package Dimensions
unit:mm 2064A
[2SA1785/2SC4645]
2.5 1.45 6.9
1.0
4.0 1.0
4.5 1.0
1.0
0.9 1
0.6
0.5 23
0.45
( ) : 2SA1785
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
2.54
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)300V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)10V, IC=(–)100mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)50mA
Output Capacitance
Cob VCB=(–)30V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)200mA, IB=(–)20mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)200mA, IB=(–)20mA
* : The 2SA1785/2SC4465 are classified by 100mA hFE as follows :
Rank
C
D
E
hFE 40 to 80 60 to 120 100 to 200
1 : Emitter 2 : Collector 2.54 3 : Base SANYO : NMP
Ratings (–)400 (–)400 (–)5 (–)1 (–)2 1 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ max
Unit
(–)1.0 µA
(–)1.0 µA
40* 200*
(50)70
MHz
(12)8
pF
(–)1.0 ...
