C4413

Ordering number:EN2923 NPN Epitaxial Planar Silicon Transistor 2SC4413 Low-Frequency General-Purpose Amplifier Applications Features · Very small-sized package permitting the 2SC4413applied sets to be made small and slim. · Adoption of FBET process. · High DC current gain. · Low collector-to-emitter saturation voltage. · High VEBO. · Small Cob. 0.425 Package Dimensions unit:mm 2059B [2SC4413] 0.3 3 0.15 0.2 0~0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Marking : GY Symbol Conditions ICBO IEBO hFE fT Cob VCB=40V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA VCB=10V, f=1MHz 0.3 0.6 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Ratings 60 50 15 100 200 20 150 150 –55 to +150 Unit V V V mA mA mA mW ˚C ˚C Ratings min typ 800 1500 200 1.5 max 0.1 0.1 3200 Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control syst...