TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4393
2SC4393
VHF~UHF Band Low Noise Amplifier Applications
Un...
TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type
2SC4393
2SC4393
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure. · NF = 1.5dB, |S21e|2 = 16dB (f = 500 MHz) · NF = 1.7dB, |S21e|2 = 10.5dB (f = 1000 MHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
17 12 3 70 30 100 125 -55~125
Unit
V V V mA mA mW °C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ïS21eï2 (1) ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
¾ 5 ¾ GHz
¾ 16 ¾ ¾ 10.5 ¾
dB
¾ 1.5 ¾ dB
¾ 1.7 ¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance
ICBO IEBO hFE Cob Cre
VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note)
¾ ¾ 25 ¾ ¾
¾ ¾ ¾ 0.85 0.57
1 1 ¾ ¾ ¾
mA mA
pF pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
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