Ordering number : EN2958B
2SC4390
SANYO Semiconductors
DATA SHEET
2SC4390
NPN Epitaxial Planar Silicon Transistor
Hig...
Ordering number : EN2958B
2SC4390
SANYO Semiconductors
DATA SHEET
2SC4390
NPN Epitaxial Planar Silicon
Transistor
High hFE, AF Amplifier Applications
Features
Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). High VEBO (VEBO≥15V).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC ICP IB
PC
Tj Tstg
Electrical Characteristics at Ta=25°C
Conditions Mounted on a ceramic board (250mm2✕0.8mm)
Parameter
Collector Cutoff Current Emitter Cutoff Current Marking : CJ
Symbol
ICBO IEBO
Conditions
VCB=15V, IE=0A VEB=10V, IC=0A
min
Ratings 20 10 15 2 4 0.4
500 1.3 150 --55 to +150
Unit V V V A A A
mW W °C °C
Ratings typ
max
Unit
0.1 μA
0.1 μA
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