TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4215
High Frequency Amplifier Applications FM, RF, MIX, IF Ampli...
TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type
2SC4215
High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
2SC4215
Unit: mm
Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2dB (typ.) (f = 100 MHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
20
mA
Base current
IB
4
mA
Collector power dissipation
PC
100
mW
Junction temperature Storage temperature range
Tj
125
°C
JEDEC
―
Tstg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEITA TOSHIBA
SC-70 2-2E1A
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
Weight: 0.006 g (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current Emitter cut-off current
DC current gain
Reverse transfer capacitance T...
