isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4162
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC4162
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching
regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
20
A
35
W
150
℃
-55~150
℃
isc Website:www.iscsemi.cn
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC4162
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.6A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.6A; VCE= 5V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
hFE-3
DC Current Gain
IC= 10mA; ...