C4162

Ordering number:ENN2483A NPN Triple Diffused Planar Silicon Transistor 2SC4162 400V/10A Switching Regulator Applications Features · High breakdown voltage, high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4162] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions PW≤300µs, duty cycle≤10% Tc=25˚C Ratings 500 400 7 10 20 35 150 –55 to +150 Unit V V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1.6A VCE=5V, IC=8A VCE=5V, IC=10mA 10 µA 10 µA 15* 50* 10 10 Continued on next page. * : The hFE1 of the 2SC4162 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. Rank L M N hFE 15 to 30 20 to 40 30 to 50 Any and all SANYO products described or contained herein do not have specifications that can handle application...