Document
Ordering number:EN2548B
Applications
· Induction cookers. · High-voltage , high-power switching.
Features
· High speed (adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · On-chip damper diode. · High reliability.
NPN Triple Diffused Planar Silicon Darlington Transistor
2SC4119
800V/15A Driver Applications
Package Dimensions
unit:mm 2048A
[2SC4119]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Votlage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation
Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC
Tj Tstg
Tc=25˚C
Conditions
E : Emitter C : Collector B : Base
SANYO : TO-3PBL
Ratings 1500 800 5 15 30 3 3.5 250 150
–55 to +150
Unit V V V A A A W W ˚C ˚C
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/D251MH/O268MO/4207TA, TS No.2548-1/4
2SC4119
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Sustain Voltage Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Diode Forward Voltage Fall Time
Switching Time Test Circuit
Symbol
Conditions
ICBO IEBO hFE VCEO(sus) VCE(sat) VBE(sat) V(BR)CBO
VF tf
VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=15A IC=100mA, IB=0 IC=15A, IB=0.75A IC=15A, IB=0.75A IC=5mA, IE=0 IEC=15A IC=15A, IB1=1A, IB2=–5A, VCC=200V, RL=13.3Ω
Ratings min typ
25 800
1500
max 0.1 600
3.0 2.5
2.0 2.0
Unit
mA mA
V V V V V µs
Unit (resistance : V, capacitance : F)
No.2548-2/4
2SC4119
No.2548-3/4
2SC4119
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices m.