C4118

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SC4118 Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1588 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation Junction temperature PC 100 mW JEDEC ― Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEITA SC-70 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2E1A temperature/current/voltage and the significant change in Weight: 0.006 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Start of commercial production 1987-01 1 2014-03-01 2SC4118 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ....