Ordering number:EN3172
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1580/2SC4104
High-Definition CRT Display Applica...
Ordering number:EN3172
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1580/2SC4104
High-Definition CRT Display Applications
Features
· High fT. · Small reverse transfer capacitance.
· Adoption of FBET process.
Package Dimensions
unit:mm 2018A
[2SA1580/2SC4104]
( ) : 2SA1580
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Base-to-Collector Time Constant Output Capacitance
Symbol
Conditions
ICBO IEBO
hFE fT rbb',cc Cob
VCB=(–)40V, IE=0 VEB=(–)3V, IC=0
VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)10mA VCB=(–)10V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=(–)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)20mA, IB=(–)2mA
Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage
VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
IC=(–)20mA, IB=(–)2mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0
* : The 2SA1580/2SC4104 are classified by 10mA hFE as follows :
60 3 120 90 4 180 135 5 270
Marking 2SA1580 : QL 2SC4104 : YY
hFE rank : 3,4,5
C : Collector B : Base E ...