DatasheetsPDF.com

C4080 Dataheets PDF



Part Number C4080
Manufacturers Sanyo
Logo Sanyo
Description 2SC4080
Datasheet C4080 DatasheetC4080 Datasheet (PDF)

Ordering number:EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Features · High fT. · High breakdown voltage. · Small reverse transfer capacitance and excellent high-frequency characteristic. · Adoption of FBET process. Package Dimensions unit:mm 2038 [2SA1575/2SC4080] E : Emitter C : Collector B : Base ( ) : 2SA1575 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Volta.

  C4080   C4080



Document
Ordering number:EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Features · High fT. · High breakdown voltage. · Small reverse transfer capacitance and excellent high-frequency characteristic. · Adoption of FBET process. Package Dimensions unit:mm 2038 [2SA1575/2SC4080] E : Emitter C : Collector B : Base ( ) : 2SA1575 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Conditions Mounted on ceramic board (250mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)150V, IE=0 VEB=(–)2V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)60mA VCE=(–)30V, IC=(–)30mA VCB=(–)30V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)30V, f=1MHz Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)100µA, IC=0 * : The 2SA1575/2SC4080 are classified by 10mA hFE as follows : 40 C 80 60 D 120 100 E 200 160 F 320 Marking 2SA1575 : AF 2SC4080 : CI hFE rank : C, D, E, F SANYO : PCP (Bottom view) Ratings (–)200 (–)200 (–)4 (–)100 (–)200 500 1.3 150 –55 to +150 Unit V V V mA mA mW W ˚C ˚C Ratings min typ 40* 20 400 1.8 (2.3) 1.4 (1.7) (–)200 (–)200 (–)4 max (–)0.1 (–)1.0 320* (–)1.0 (–)1.0 Unit µA µA MHz pF pF pF pF V V V V V SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72098HA (KT)/7139MO, TS No.3171-1/2 2SA1575/2SC4080 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or .


C4075 C4080 A1575


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)