2SC5545
Silicon NPN Epitaxial VHF / UHF wide band amplifier
Features
• Excellent inter modulation characteristic • High...
2SC5545
Silicon
NPN Epitaxial VHF / UHF wide band amplifier
Features
Excellent inter modulation characteristic High power gain and low noise figure ;
PG=16dB typ. , NF=1.1dB typ. at f=900MHz
Outline
Note: Marking is “ZS-”.
MPAK-4
2 3
1
4 1. Collector 2. Emitter 3. Base 4. Emitter
ADE-208-746 (Z) 1st. Edition Jan. 1999
2SC5545
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC Pc Tj Tstg
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Collector to base breakdown V(BR)CBO voltage
Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance
I CBO I CEO I EBO hFE Cob
Min 15
— — — 80 —
Typ —
— — — 120 0.69
Gain bandwidth product Power gain
fT PG
10 12.6 14 16
Noise figure
NF — 1.1
Ratings 15 6 1.5 50 150 150 –55 to +150
Max Unit —V
1 µA 1 mA 10 µA 160 V 1.1 pF
— GHz — dB
2.0 dB
Unit V V V mA mW °C °C
Test Conditions IC = 10µA , IE = 0
VCB = 12V , IE = 0 VCE = 6V , RBE = Åá VEB = 1.5V , IC = 0 VCE = 3V , IC = 20mA VCB = 3V , IE = 0 f = 1MHz VCE = 3V , IC = 20mA VCE = 3V, IC = 20mA f = 900MHz VCE = 3V, IC = 5mA f = 900MHz
2
Collector Power Dissipation Pc (mW)
Main Characteristics
Maximum Collector Dissipation Curve 200 150 100
50
0 50 100 150 200 Ambient Temperature Ta (°C)
DC Current Transfer Ratio hFE
...
