TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3963
2SC3963
High-Voltage General Amplifier Appli...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (PCT Process)
2SC3963
2SC3963
High-Voltage General Amplifier Applications Color TV Class B Sound Output Applications
Unit: mm
High voltage: VCEO = 160 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 200 V
Collector-emitter voltage
VCEO 160 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 200 mA
Base current
IB 100 mA
Collector power dissipation
PC 1.5 W
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-8H1A
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
Weight: 0.82 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacit...
