C3651

Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · LF amplifiers, various drivers, muting circuit. Features · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SC3651] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature * Mounted on ceramic board (250mm2×0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC* Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Marking : CG ICBO IEBO hFE1 hFE2 fT Cob VCB=80V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=10V, IC=10mA VCB=10V, f=1MHz E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Ratings 120 100 15 200 300 500 1.3 150 –55 to +150 Unit V V V mA mA mW W ˚C ˚C Ratings min typ 500 1000 400 150 6.5 max 0.1 0.1 2000 Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications...