Document
Ordering number:ENN2007A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1419/2SC3649
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide high-
density hybrid ICs.
Package Dimensions
unit:mm 2038A
[2SA1419/2SC3649]
4.5 1.6 1.5
1.0 2.5 4.25max
( ) : 2SA1419
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.4 0.5
3 1.5 2 3.0
1
0.75
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions Moutned on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)120V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE1 hFE2
VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)10mA
* : The 2SA1419/2SC3649 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE 100 to 200
Marking 2SA1419 : AE 2SC3649 : CE
140 S 280 200 to 400 hFE rank : R, S, T
Ratings (–)180 (–)160 (–)6 (–)1.5 (–)2.5 500 1.5 150
–55 to +150
Unit V V V A A
mW W ˚C ˚C
Ratings min typ max
Unit
(–)1 µA
(–)1 µA
100*
400*
80
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/4
2SA1419/2SC3649
Continued from preceding page. Parameter
Gain-Bandwidth Product Output Capacitance
Symbol
Conditions
fT VCE=(–)10V, IC=(–)50mA Cob VCB=(–)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage
Turn-ON Time
VCE(sat) IC=(–)500mA, IB=(–)50mA
VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
IC=(–)500mA, IB=(–)50mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0
ton See specified Test Circuit.
Stotage Time
tstg See specified Test Circuit.
Fall Time
Switching Time Test.
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