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A1419 Dataheets PDF



Part Number A1419
Manufacturers Sanyo
Logo Sanyo
Description 2SA1419
Datasheet A1419 DatasheetA1419 Datasheet (PDF)

Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide high- density hybrid ICs. Package Dimensions unit:mm 2038A [2SA1419/2SC3649] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1419 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector .

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Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide high- density hybrid ICs. Package Dimensions unit:mm 2038A [2SA1419/2SC3649] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1419 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Conditions Moutned on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)120V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE1 hFE2 VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)10mA * : The 2SA1419/2SC3649 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 Marking 2SA1419 : AE 2SC3649 : CE 140 S 280 200 to 400 hFE rank : R, S, T Ratings (–)180 (–)160 (–)6 (–)1.5 (–)2.5 500 1.5 150 –55 to +150 Unit V V V A A mW W ˚C ˚C Ratings min typ max Unit (–)1 µA (–)1 µA 100* 400* 80 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/4 2SA1419/2SC3649 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Symbol Conditions fT VCE=(–)10V, IC=(–)50mA Cob VCB=(–)10V, f=1MHz Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Turn-ON Time VCE(sat) IC=(–)500mA, IB=(–)50mA VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)500mA, IB=(–)50mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 ton See specified Test Circuit. Stotage Time tstg See specified Test Circuit. Fall Time Switching Time Test.



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