Ordering number:ENN1720A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1415/2SC3645
High-Voltage Switching, Predriver...
Ordering number:ENN1720A
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1415/2SC3645
High-Voltage Switching, Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage (VCEO=160V). · Excellent linearity of hFE and small Cob. · Fast switching speed. · Ultrasmall size marking it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm 2038A
[2SA1415/2SC3645]
4.5 1.6 1.5
1.0 2.5 4.25max
( ) : 2SA1415
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC1 PC2 Tj
Tstg
Electrical Characteristics at Ta = 25˚C
0.4 0.5
32 1.5 3.0
1
0.75
Conditions
Moutned on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)80V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)5V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)10mA
* : The 2SA1415/2SC3645 are classified by 10mA hFE as follows :
Rank
R
S
T
hFE 100 to 200 140 S 280 200 to 400
Marking 2SA1415 : AA 2SC3645 : CA
hFE rank : R, S, T
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP
Ratings (–)180 (–)160 (–)5 (–)140 (–)200 500 1.3 150
–55 to +150
Unit V V V mA mA
mW W ˚C ˚C
Ratings min typ max
Unit
(–)100 nA
(–)100 nA
100*
400*
150 MHz
Continued...
