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A1415 Dataheets PDF



Part Number A1415
Manufacturers Sanyo
Logo Sanyo
Description 2SA1415
Datasheet A1415 DatasheetA1415 Datasheet (PDF)

Ordering number:ENN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features · Adoption of FBET process. · High breakdown voltage (VCEO=160V). · Excellent linearity of hFE and small Cob. · Fast switching speed. · Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1415 Specifications Absolute Maximum Ratings a.

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Ordering number:ENN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features · Adoption of FBET process. · High breakdown voltage (VCEO=160V). · Excellent linearity of hFE and small Cob. · Fast switching speed. · Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1415 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC1 PC2 Tj Tstg Electrical Characteristics at Ta = 25˚C 0.4 0.5 32 1.5 3.0 1 0.75 Conditions Moutned on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)80V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)5V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)10mA * : The 2SA1415/2SC3645 are classified by 10mA hFE as follows : Rank R S T hFE 100 to 200 140 S 280 200 to 400 Marking 2SA1415 : AA 2SC3645 : CA hFE rank : R, S, T 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Ratings (–)180 (–)160 (–)5 (–)140 (–)200 500 1.3 150 –55 to +150 Unit V V V mA mA mW W ˚C ˚C Ratings min typ max Unit (–)100 nA (–)100 nA 100* 400* 150 MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3103TN (KT)/71598HA (KT)/3277KI/2145MW, TS No.1720-1/4 2SA1415/2SC3645 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Turn-ON Time Storage Time Fall Time Symbol Conditions Cob VCB=(–)10V, f=1MHz VCE(sat) IC=(–)50mA, IB=(–)5mA ton See sepcified Test Circuit. tstg See sepcified Test Circuit. tf See sepcified Test Circuit. Switching Time Test Circuit IB1 IN 3kΩ IB2 OUT 5kΩ 50Ω + 1µF 2kΩ + 1µF --2V 20V IC=10IB1=--10IB2=10mA (For PNP, the polarity is reversed.) Ratings min typ max Unit (4.0) pF 3.0 pF (–0.14) (–0.4) V 0.07 0.3 V 0.1 µs 1.5 µs 0.1 µs Collector Current, IC – mA IC -- VCE --140 --120 --0.6mA --0.5mA --100 --80 --0.4mA --0.3mA 2SA1415 --60 --0.2mA --40 --20 0 0 --140 --120 --0.1mA IB=0 --10 --20 --30 --40 --50 --60 --70 Collector-to-Emitter Voltage, VCE – V ITR03510 IC -- VBE 2SA1415 --100 --80 --60 --40 --20 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V ITR03512 Collector Current, IC – mA Collector Current, IC – mA 0.6mA IC -- VCE 140 120 0.5mA 2SC3645 0.4mA 100 0.3mA 80 60 0.2mA 40 0.1mA 20 IB=0 0 0 10 20 30 40 50 60 70 Collector-to-Emitter Voltage, VCE – V ITR03511 IC -- VBE 140 2SC3645 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE – V ITR03513 No.1720-2/4 Collector Current, IC – mA DC Current Gain, hFE 2SA1415/2SC3645 hFE -- IC 1000 hFE -- IC 1000 2SA1415 2SC3645 7 VCE=--5V 7 VCE=5V 55 33 22 DC Current Gain, hFE 100 7 5 3 2 100 7 5 3 2 10 5 7 --1.0 3 2 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC – mA ITR03514 fT -- IC 2SA1415 VCE=--10V 10 5 7 1.0 2 3 5 7 10 23 5 Collector Current, IC – mA 3 2SC3645 fT -- IC 2 VCE=10V 7 100 2 ITR03515 Gain-Bandwidth Product, fT – MHz Gain-Bandwidth Product, fT – MHz 100 7 5 3 2 100 7 5 3 2 Output Capacitance, Cob – pF 10 --1.0 100 7 5 3 2 23 5 7 --10 23 5 7 --100 2 Collector Current, IC – mA ITR03516 Cob -- VCB 2SA1415 f=1MHz 10 7 5 3 2 1.0 --1.0 2 --1.0 7 5 3 2 23 5 7 --10 23 5 7 --100 Collector-to-Base Voltage, VCB -- V ITR03518 VCE(sat) -- IC 2SA1415 IC / IB=10 --0.1 7 5 3 2 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC – mA ITR03520 Collector-to-Emitter Saturation Voltage, VCE(sat) – V Output Capacitance, Cob – pF 10 1.0 100 7 5 3 2 23 5 7 10 23 5 7 100 2 Collector Current, IC – mA ITR03517 Cob -- VCB 2SC3645 f=1MHz 10 7 5 3 2 1.0 1.0 1.0 7 5 3 2 23 5 7 10 23 5 7 100 Collector-to-Base Voltage, VCB -- V ITR03519 VCE(sat) -- IC 2S.


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