Document
Ordering number:ENN1720A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1415/2SC3645
High-Voltage Switching, Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage (VCEO=160V). · Excellent linearity of hFE and small Cob. · Fast switching speed. · Ultrasmall size marking it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm 2038A
[2SA1415/2SC3645]
4.5 1.6 1.5
1.0 2.5 4.25max
( ) : 2SA1415
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC1 PC2 Tj
Tstg
Electrical Characteristics at Ta = 25˚C
0.4 0.5
32 1.5 3.0
1
0.75
Conditions
Moutned on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)80V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)5V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)10mA
* : The 2SA1415/2SC3645 are classified by 10mA hFE as follows :
Rank
R
S
T
hFE 100 to 200 140 S 280 200 to 400
Marking 2SA1415 : AA 2SC3645 : CA
hFE rank : R, S, T
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP
Ratings (–)180 (–)160 (–)5 (–)140 (–)200 500 1.3 150
–55 to +150
Unit V V V mA mA
mW W ˚C ˚C
Ratings min typ max
Unit
(–)100 nA
(–)100 nA
100*
400*
150 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/3277KI/2145MW, TS No.1720-1/4
2SA1415/2SC3645
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage Turn-ON Time Storage Time Fall Time
Symbol
Conditions
Cob VCB=(–)10V, f=1MHz
VCE(sat) IC=(–)50mA, IB=(–)5mA
ton See sepcified Test Circuit. tstg See sepcified Test Circuit.
tf See sepcified Test Circuit.
Switching Time Test Circuit
IB1 IN 3kΩ IB2
OUT
5kΩ 50Ω
+ 1µF
2kΩ
+ 1µF
--2V 20V
IC=10IB1=--10IB2=10mA (For PNP, the polarity is reversed.)
Ratings min typ max
Unit
(4.0)
pF
3.0 pF
(–0.14) (–0.4) V
0.07 0.3 V
0.1 µs
1.5 µs
0.1 µs
Collector Current, IC – mA
IC -- VCE
--140
--120 --0.6mA --0.5mA
--100
--80
--0.4mA --0.3mA
2SA1415
--60 --0.2mA
--40 --20
0 0
--140 --120
--0.1mA
IB=0
--10 --20 --30 --40 --50 --60 --70
Collector-to-Emitter Voltage, VCE – V ITR03510
IC -- VBE
2SA1415
--100
--80
--60
--40
--20
0 0
--0.2 --0.4 --0.6 --0.8 --1.0
Base-to-Emitter Voltage, VBE – V ITR03512
Collector Current, IC – mA
Collector Current, IC – mA 0.6mA
IC -- VCE
140
120 0.5mA
2SC3645
0.4mA
100
0.3mA
80
60 0.2mA
40
0.1mA
20
IB=0
0 0 10 20 30 40 50 60 70
Collector-to-Emitter Voltage, VCE – V ITR03511
IC -- VBE
140
2SC3645
120
100
80
60
40
20
0 0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE – V ITR03513
No.1720-2/4
Collector Current, IC – mA
DC Current Gain, hFE
2SA1415/2SC3645
hFE -- IC
1000
hFE -- IC
1000
2SA1415
2SC3645
7
VCE=--5V
7
VCE=5V
55
33 22
DC Current Gain, hFE
100 7 5
3 2
100 7 5
3 2
10
5 7 --1.0
3 2
2 3 5 7 --10 2 3 5 7 --100 2
Collector Current, IC – mA
ITR03514
fT -- IC
2SA1415 VCE=--10V
10 5 7 1.0
2 3 5 7 10
23 5
Collector Current, IC – mA
3
2SC3645
fT -- IC
2 VCE=10V
7 100 2 ITR03515
Gain-Bandwidth Product, fT – MHz
Gain-Bandwidth Product, fT – MHz
100 7 5
3 2
100 7 5
3 2
Output Capacitance, Cob – pF
10
--1.0
100 7 5 3 2
23
5 7 --10
23
5 7 --100 2
Collector Current, IC – mA
ITR03516
Cob -- VCB
2SA1415 f=1MHz
10 7 5
3 2
1.0
--1.0
2
--1.0
7 5 3 2
23
5 7 --10
23
5 7 --100
Collector-to-Base Voltage, VCB -- V ITR03518
VCE(sat) -- IC
2SA1415
IC / IB=10
--0.1
7 5
3 2
5 7 --1.0
2 3 5 7 --10 2 3 5 7 --100 2
Collector Current, IC – mA
ITR03520
Collector-to-Emitter Saturation Voltage, VCE(sat) – V
Output Capacitance, Cob – pF
10 1.0
100 7 5
3 2
23
5 7 10
23
5 7 100
2
Collector Current, IC – mA
ITR03517
Cob -- VCB
2SC3645 f=1MHz
10 7 5
3 2
1.0 1.0
1.0 7 5
3 2
23
5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB -- V ITR03519
VCE(sat) -- IC
2S.