PNP/NPN Epitaxial Planar Silicon Transistors
· Adoption of FBET process.
· High breakdown voltage (VCEO=160V).
· Excellent linearity of hFE and small Cob.
· Fast switching speed.
· Ultrasmall size marking it easy to provide high-
density, small-sized hybrid ICs.
( ) : 2SA1415
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
Electrical Characteristics at Ta = 25˚C
Moutned on ceramic board (250mm2×0.8mm)
Collector Cutoff Current
ICBO VCB=(–)80V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)5V, IC=(–)10mA
fT VCE=(–)10V, IC=(–)10mA
* : The 2SA1415/2SC3645 are classified by 10mA hFE as follows :
hFE 100 to 200 140 S 280 200 to 400
Marking 2SA1415 : AA
2SC3645 : CA
hFE rank : R, S, T
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
–55 to +150
min typ max
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/3277KI/2145MW, TS No.1720-1/4