C3607

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 2SC3607 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 9.5dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation VCBO VCEO VEBO IB IC PC 20 12 3 40 80 400 800 (Note 1) Junction temperature Storage temperature range Tj 150 Tstg -55~125 Note 1: When mounted ceramic substrate of 250 mm2 ´ 0.8 t Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 1 GHz VCE = 10 V, IC = 40 mA, f = 1 GHz Min Typ. Max Unit 5 6.5 ¾ GHz ¾ 15 ¾ dB 6 9.5 ¾ ¾ 1.1 ¾ dB ¾ 1.8 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Collector cut-off current Emitter cut-off current DC current gain Collecter output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz (Note 2) ¾ ¾ 30 ¾ ¾ Note 2: Cre is measured by 3 terminal method with capacitance bridge. Typ. ¾ ¾ ¾ 1...