TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3607
2SC3607
VHF~UHF Band Low Noise Amplifier Applications
Un...
TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type
2SC3607
2SC3607
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 9.5dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current
Collector power dissipation
VCBO VCEO VEBO
IB IC
PC
20 12 3 40 80 400 800 (Note 1)
Junction temperature Storage temperature range
Tj 150 Tstg -55~125
Note 1: When mounted ceramic substrate of 250 mm2 ´ 0.8 t
Unit V V V mA mA
mW
°C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ïS21eï2 (1) ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 1 GHz VCE = 10 V, IC = 40 mA, f = 1 GHz
Min Typ. Max Unit
5 6.5 ¾ GHz
¾ 15 ¾ dB
6 9.5 ¾
¾ 1.1 ¾ dB
¾ 1.8
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current Emitter cut-off current DC current gain Collecter output capacitance Reverse transfer capacitance
ICBO IEBO hFE Cob Cre
VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
¾ ¾ 30 ¾ ¾
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Typ.
¾ ¾ ¾ 1...