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A1405 Dataheets PDF



Part Number A1405
Manufacturers Sanyo
Logo Sanyo
Description 2SA1405
Datasheet A1405 DatasheetA1405 Datasheet (PDF)

Ordering number:ENN1764B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1405/2SC3599 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Features · High fT : fT typ=500MHz. · High breakdown voltage : VCEO≥120V. · Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=2.5pF (NPN), 3.8pF (PNP). · Complementary pair with the 2SA1405/2SC3599. · Adoption .

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Ordering number:ENN1764B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1405/2SC3599 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Features · High fT : fT typ=500MHz. · High breakdown voltage : VCEO≥120V. · Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=2.5pF (NPN), 3.8pF (PNP). · Complementary pair with the 2SA1405/2SC3599. · Adoption of FBET process. ( ) : 2SA1405 Specifications Package Dimensions unit:mm 2009B [2SA1405/2SC3599] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 12 3 2.4 4.8 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)80V, IE=0 Emitter Cutoff Current IEBO VEB=(–)2V, IC=0 DC Current Gain hFE1 hFE2 VCB=(–)10V, IC=(–)50mA VCE=(–)10V, IC=250mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)50mA * : The 2SA1405/2SC3599 are classified by 50mA hFE as follows : Rank C D E F hFE 40 to 80 60 to 120 100 to 200 160 to 320 Ratings (–)120 (–)120 (–)4 (–)300 (–)600 1.2 8 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Ratings min typ max Unit (–)0.1 µA (–)1.0 µA 40* 320* 20 500 MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92502AS (KT)/71598HA (KT)/12696TS (KOTO) X-7233/3237KI/2225MW, TS No.1764-1/4 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Output Capacitance Reverse Transfer Capacitance 2SA1405/2SC3599 Symbol Conditions VCE(sat) IC=(–)70mA, IB=(–)7mA VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)70mA, IB=(–)7mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)100µA, IC=0 Cob VCB=(–)30V, f=1MHz Cre VCB=(–)30V, f=1MHz Ratings min typ (–)120 (–)120 (–)4 2.9 (4.3) 2.5 (3.8) max 0.6 (–)0.8 (–)1.0 Unit V V V V V V pF pF pF pF Collector Current, IC – mA Collector Current, IC – mA --200 --160 --120 --80 --40 0 0 --350 --300 --250 --200 --150 --100 --50 0 0 3 2 100 7 5 3 2 IC -- VCE 2SA1405 --2.0mA --1.8mA --1.6mA --1.4mA --1.2mA --1.0mA --0.8mA --0.6mA --0.4mA --0.2mA IB=0 --4 --8 --12 --16 --20 Collector-to-Emitter Voltage, VCE – V ITR03462 IC -- VBE 2SA1405 VCE= --10V --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE – V ITR03464 hFE -- IC 2SA1405 VCE= --10V 10 7 5 3 5 7 --10 2 3 5 7 --100 2 3 5 Collector Current, IC – mA ITR03466 DC Current Gain, hFE Collector Current, IC – mA Collector Current, IC – mA 200 2SC3599 IC -- VCE 2.0mA 1.8mA 1.6mA 160 1.4mA 1.2mA 120 1.0mA 0.8mA 80 0.6mA 0.4mA 40 0.2mA IB=0 0 04 8 12 16 20 Collector-to-Emitter Voltage, VCE – V ITR03463 IC -- VBE 350 2SC3599 300 VCE=10V 250 200 150 100 50 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE – V ITR03465 hFE -- IC 3 2SC3599 2 VCE=10V 100 7 5 3 2 10 7 5 3 5 7 10 2 3 5 7 100 23 5 Collector Current, IC – mA ITR03467 No.1764-2/4 DC Current Gain, hFE Gain-Bandwidth Product, fT – MHz Gain-Bandwidth Product, fT – MHz 2SA1405/2SC3599 1000 fT -- IC fT -- IC 1000 2SA1405 2SC3599 7 VCE= --10V 7 VCE=10V 55 33 22 Output Capacitance, Cob – pF Reverse Transfer Capacitance, Cre – pF 100 7 5 5 7 --10 23 5 7 --100 2 Collector Current, IC – mA 35 ITR03468 Cob -- VCB 5 2SA1405 3 f=1MHz 2 10 7 5 3 2 1.0 5 5 3 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector-to-Base Voltage, VCB -- V ITR03470 Cre -- VCB 2SA1405 f=1MHz 2 10 7 5 3 2 1.0 5 7 --1.0 23 5 7 --10 2 3 5 7 --100 Collector-to-Base Voltage, VCB -- V ITR03472 --10 VCE(sat) -- IC 7 2SA1405 5 IC / IB=0 3 2 --1.0 7 5 3 2 --0.1 7 5 3 3.


C3599 A1405 C3600


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