Ordering number:EN1421A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1338/2SC3392
High-Speed Switching Applications
...
Ordering number:EN1421A
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1338/2SC3392
High-Speed Switching Applications
Features
· Adoption of FBET process.
· High breakdown voltage : VCEO=(–)50V. · Large current capacitiy and high fT. · Very small-sized package permitting sets to be small-
sized, slim.
Package Dimensions
unit:mm 2018A
[2SA1338/2SC3392]
Switching Time Test Circuit
( ) : 2SA1338
(For
PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F)
Specifications
C : Collector B : Base E : Emitter
SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions
Ratings (–)60 (–)50 (–)5
(–)500 (–)800
200 150 –55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ max
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product
ICBO IEBO hFE
fT
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA
100*
300 (200)
(–)0.1 (–)0.1 560*
Common Base Output Capacitance Collector-to-Emitter Saturation Voltage
Cob VCB=(–)10V, f=1MHz VCE(sat) IC=(–)100mA, IB=(–)10mA
3.7 (5.6)
0.1 (0.15)
0.3 (0.4)
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)100mA, IB=(–)10mA
0.8
Collector-to-Base Breakdown Voltage
V(BR)CBO IC=(–)10µA,...
