ST 2SC3330
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdiv...
ST 2SC3330
NPN Silicon Epitaxial Planar
Transistor for switching and AF amplifier applications.
The
transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 60 50 5 200 300 150
-55 to +150
Unit V V V mA
mW OC OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 2SC3330
Characteristics at Tamb=25 OC
DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y G L
Collector Base Breakdown Voltage at IC=100μA
Collector Emitter Breakdown Voltage at IC=10mA
Emitter Base Breakdown Voltage at IE=10μA
Collector Cutoff Current at VCB=40V
Emitter Cutoff Current at VEB=3V
Collector Saturation Voltage at IC=100mA, IB=10mA
Gain Bandwidth Product at VCE=6V, IC=10mA
Output Capacitance at VCB=6V, f=1MHz
Noise Figure at VCE=6V, IE=0.5mA at f=1KHz, RS=500Ω
Symbol
hFE hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT COB
NF
Min.
40 70 120 200 350 60 50 5 -
-
Typ.
0.15 200 2.5
4
Max.
Unit
80 140 240 400 700 -
-V
-V
-V
0.1 μA
0.1 μA
0.3 V
- MHz
- pF
-...