Ordering number:EN1312B
NPN Epitaxial Planar Silicon Transistor
2SC3176
CRT Horizontal Deflection Output Applications (...
Ordering number:EN1312B
NPN Epitaxial Planar Silicon
Transistor
2SC3176
CRT Horizontal Deflection Output Applications (with Damper Diode)
Features
· Fast switching speed. · Especially suited for use in high-definition CRT
display (VCC=12 to 24V). · Wide ASO.
Package Dimensions
unit:mm 2010C
[2SC3176]
Specifications
JEDEC : TO-220AB EIAJ : SC46
1 : Base 2 : Collector 3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
ICBO IEBO hFE1 hFE2
fT VCE(sat) VBE(sat)
VCB=200V, IE=0 VEB=6V, IC=0 VCE=1V, IC=1A VCE=1V, IC=5A VCE=10V, IC=0.5A IC=5A, IB=0.65A IC=5A, IB=0.65A
Ratings 400 200 6 7 12 4 50 150
–55 to +150
Unit V V V A A A W ˚C ˚C
Ratings min typ
15 8
10 40
max 100 400
40
1 1.3
Unit µA mA
MHz V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonabl...
