Ordering number:EN1066A
NPN Epitaxial Planar Silicon Transistor
2SC3142
High-Frequency General-Purpose Amplifier Applic...
Ordering number:EN1066A
NPN Epitaxial Planar Silicon
Transistor
2SC3142
High-Frequency General-Purpose Amplifier Applications
Features
· FBET series. · Compact package enabling compactness of sets. · High fT and small cre (fT=750MHz typ, cre=0.6 typ).
Package Dimensions
unit:mm 2018A
[2SC3142]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Feedback Capacitance Base-to-Collector Time Constant Noise Figure Power Gain
ICBO IEBO hFE
fT Cre rbb'CC NF
PG
VCB=10V, IE=0 VEB=3V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=4mA VCB=6V, f=1MHz VCE=6V, IC=1mA, f=31.9MHz VCE=6V, IC=1mA, f=100MHz VCE=6V, IC=1mA, f=100MHz
* : The 2SC3142 are classified as follows according to hFE at 1mA : (Note) Marking : J
hFE rank : 2, 3, 4
40 2 80
60 3
120
C : Collector B : Base E : Emitter SANYO : CP
Ratings 25 20 3 30
150 125 –40 to +125
Unit V V V mA
mW ˚C ˚C
Ratings min typ
40* 450 750
0.6
2.2 28
max 0.1 0.1
180*
0.9 19
Unit
µA µA
MHz pF ps dB dB
90 4 180
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability...