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C3138 Dataheets PDF



Part Number C3138
Manufacturers Toshiba
Logo Toshiba
Description 2SC3138
Datasheet C3138 DatasheetC3138 Datasheet (PDF)

2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications High Voltage Switching Applications Unit: mm • High voltage: VCBO = 200 V (max) VCEO = 200 V (max) • Small flat package • Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Stor.

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2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications High Voltage Switching Applications Unit: mm • High voltage: VCBO = 200 V (max) VCEO = 200 V (max) • Small flat package • Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 200 V 200 V 5 V 50 mA 20 mA 150 mW 125 °C −55 to 125 °C JEDEC JEITA TOSHIBA TO-236MOD SC-59 2-3F1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.012 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1982-10 1 2014-03-01 2SC3138 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Symbol Test Condition Min Typ. Max Unit ICBO VCB = 200 V, IE = 0 IEBO VEB = 5 V, IC = 0 V(BR) CBO IC = 0.1 mA, IE = 0 V(BR) CEO IC = 1 mA, IB = 0 hFE (Note) VCE = 3 V, IC = 10 mA VCE (sat) IC = 10 mA, IB = 1 mA VBE (sat) IC = 10 mA, IB = 1 mA fT VCE = 10 V, IC = 2 mA Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ ⎯ 0.1 μA ⎯ ⎯ 0.1 μA 200 ⎯ ⎯ V 200 ⎯ ⎯ V 70 ⎯ 240 ⎯ ⎯ 0.1 0.5 V ⎯ 0.75 1.5 V 50 100 ⎯ MHz ⎯ 2 4 pF ton OUTPUT ⎯ 0.3 ⎯ INPUT 7 kΩ 50 Ω 5 kΩ 8.2 kΩ tstg 10 V 0 ⎯ 2 ⎯ μs VCC 5 μs VBB = 50 V tf Duty cycle ≤ 2% = −3 V ⎯ 0.4 ⎯ Note: hFE classification O: 70 to 140, Y: 120 to 240 Marking N: Type Name O: hFE Rank 2 2014-03-01 2SC3138 (LOW CURRENT REGION) 3 2014-03-01 2SC3138 4 2014-03-01 2SC3138 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applicatio.


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