Ordering number:EN1017B
NPN Triple Diffused Planar Silicon Transistor
2SC3088
500V/4A Switching Regulator Applications
...
Ordering number:EN1017B
NPN Triple Diffused Planar Silicon
Transistor
2SC3088
500V/4A Switching
Regulator Applications
Features
· High breakdown voltage (VCBO≥800V). · Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm 2022A
[2SC3088]
Specifications
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation
VCBO VCEO VEBO
IC ICP IB PC
PW≤300µs, Duty Cycle≤10% Tc=25˚C
800 500
7 4 8 1.5 2.5 60
Junction Temperature
Tj
150
Storage Temperature
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ max
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain Collector-to-Emitter Saturation Voltage
ICBO IEBO hFE1 hFE2 VCE(sat)
VCB=500V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.3A VCE=5V, IC=1.5A IC=1.5A, IB=0.3A
15* 8
Base-to-Emitter Saturation Voltage
VBE(sat) IC=1.5A, IB=0.3A
* : The hFE1 of the 2SC3088 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
15 L 30 20 M 40 30 N 50
10 10 50*
1.0 1.5
Unit V V V A A A W W ˚C ˚C
Unit
µA µA
V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, air...