C3086

Ordering number:EN1010B NPN Triple Diffused Planar Silicon Transistor 2SC3086 500V/3A Switching Regulator Applications Features · High breakdown voltage (VCBO≥800V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3086] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation VCBO VCEO VEBO IC ICP IB PC PW≤300µs, Duty Cycle≤10% Tc=25˚C 800 500 7 3 6 1 1.75 40 Junction Temperature Tj 150 Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Collector Cutoff Current ICBO VCB=500V, IE=0 Emitter Cutoff Current DC Current Gain IEBO hFE1 hFE2 VEB=5V, IC=0 VCE=5V, IC=0.3A VCE=5V, IC=1.5A 15* 8 Collector-to-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=0.3A Base-to-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=0.3A * : The hFE1 of the 2SC3086 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. 15 L 30 20 M 40 30 N 50 10 10 50* 1.0 1.5 Unit V V V A A A W W ˚C ˚C Unit µA µA V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-s...