Document
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3039
DESCRIPTION ·With TO-220C package ·High breakdown voltage (VCBO 500V). ·Fast switching speed. ·Wide area of safe operation
APPLICATIONS ·400V/7A switching regulator applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO VEBO
Collector-emitter voltage Emitter-base voltage
IC Collector current (DC)
ICM Collector current-peak IB Base current
PC Collector dissipation
Tj Junction temperature Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
Ta=25 TC=25
VALUE 500 400 7 7 14 3 1.75 50 150
-50~150
UNIT V V V A A A
W
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO Collector cut-off current
VCB=400V ;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.8A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
fT Transition frequency
IC=0.8A ; VCE=10V
Cob Collector output capacitance
f=1MHz ; VCB=10V
Switching times
ton Turn-on time ts Storage time tf Fall time
IC=5A, IB1=1A IB2=-1A; VCC=200V RL=40C
hFE-1 classifications LM
N
15-30
20-40
30-50
Product Specification
2SC3039
MIN TYP. MAX UNIT 400 V 500 V
7V 1.0 V 1.5 V 10 µA 10 µA
15 50 8
20 MHz 80 pF
1.0 µs 2.5 µs 1.0 µs
2
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC3039
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3039
4
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