AM9945N

BYD Microelectronics Co., Ltd. AM9945N Dual N-Channel MOSFET General Description The AM9945N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as DC-DC converters and power managements in portable and battery-powered products. Features  VDS (V) =60V Low on-state resistance RDS(on) = 89 mΩ MAX (VGS = 10V, ID =3.6A) RDS(on) = 104 mΩ MAX (VGS = 4.5V, ID = 3.4A) Fast switching speed Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL LIMIT Drain to Source Voltage VDSS 60 Gate to Source Voltage VGSS ±20 Drain Current (DC)a Drain Current (pulse)b TA=25℃ TA=70℃ ID(DC) ID(pulse) ±3.6 ±3.1 ±25 Contnuous Source Current (Diode Conduction)a IS 2 Maximun Power Dissipationa Channel Temperature TA=25℃ TA=70℃ PD Tch 2.1 1.3 150 UNIT V V A A A W ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta t<=10sec t<=5sec RθJA Maximum 62.5 110 Units ℃/W ℃/W Note a. Mounted on FR4 Board of 1”x1”. b. Pulse width limited by maximum junction temperature Caution: These values must not be exceeded under any conditions. Ordering Information z Part Number: AM9945N z Package: SOIC8 Datasheet ES-BYD-WDZCE03D-064 Rev.A/0 Page 1 of 5 BYD Microelectronics Co., Ltd. AM9945N Electrical Characteristics (TA = 25℃) CHARACTERISTICS SYMBOL TEST CONDITION MIN. Typ. MAX Unit Zero Gate Votage Drain Current Gate-Body Leakage Gate Cut-off Votage On-State Drain Current Drain -Source On-...