C5254

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 2SC5254 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure: NF = 1.5dB (f = 2 GHz) · High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 15 7 1.5 40 20 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 1 GHz VCE = 5 V, IC = 20 mA, f = 2 GHz VCE = 5 V, IC = 5 mA, f = 1 GHz VCE = 5 V, IC = 5 mA, f = 2 GHz Min Typ. Max Unit 9 12 ¾ GHz 11.5 5.5 14.5 8.5 ¾ ¾ dB ¾ 1.1 ¾ dB ¾ 1.5 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 5 V, IC = 20 mA Cob VCB = 5 V, IE = 0, f = 1 MHz Cre (Note 2) ¾ ¾ 50 ¾ ¾ ¾1 ¾1 ¾ 160 0.5 ¾ 0.4 0.8 mA mA pF pF Note 1: hFE classification R: 50~100, O: 80~160 Note 2: Cre is measured by 3 terminal metho...