High Current Power MOSFET
High Current Power MOSFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTH 75N15 IXTQ 75N15 IXTT 75N15
VDSS ID25...
Description
High Current Power MOSFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTH 75N15 IXTQ 75N15 IXTT 75N15
VDSS ID25
RDS(on)
= 150 V = 75 A = 23 mΩ
TO-247 AD (IXTH)
Symbol
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD, TO-3P TO-268
Maximum Ratings
150 V 150 V ±20 V ±30 V
75 A
300 A 75 A 60 mJ 1.5 J
5 V/ns
330
-55 ... +150 150
-55 ... +150
W
°C °C °C
300 °C
1.13/10 Nm/lb.in.
6g 4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250µA
IGSS VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Characteristic Values
Min. Typ.
Max.
150 V
2.0 4.0 V
±100 nA
25 µA 250 µA
23 mΩ
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TO-3P (IXTQ)
(TAB)
G DS
TO-268 (IXTT)
(TAB)
G S
(TAB)
G = Gate S = Source
Features
D = Drain TAB = Drain
z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount z Space savings z H...
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